TY  - JOUR
AU  - Stojanović, Vladica
AU  - Kevkić, Tijana
AU  - Ljajko, Eugen
AU  - Jelić, Gordana
PY  - 2019
UR  - https://www.scientificbulletin.upb.ro/rev_docs_arhiva/rez083_245254.pdf
UR  - http://jakov.kpu.edu.rs/handle/123456789/974
AB  - In this paper we propose modification of a linear autoregressive moving-average (ARMA) model by using the so-called Noise-Indicator time series. The obtained model, named NIN–ARMA model, is nonlinear threshold autoregressive one. The basic stochastic properties of the NIN–ARMA model have been analyzed and the Empirical Characteristic Function (ECF) method has been used for parameters estimation. Finally, the NIN–ARMA model has been applied in fitting of two actual, real-based physical time series.
PB  - University Politehnica of Bucharest
T2  - U.P.B. Scientific Bulletin-Series A: Applied Mathematics & Physics
T1  - Noise-Indicator Arma Model with Application in Fitting Physically-Based Time Series
VL  - 81
IS  - 2
SP  - 257
EP  - 264
UR  - https://hdl.handle.net/21.15107/rcub_jakov_974
ER  - 

@article{
author = "Stojanović, Vladica and Kevkić, Tijana and Ljajko, Eugen and Jelić, Gordana",
year = "2019",
abstract = "In this paper we propose modification of a linear autoregressive moving-average (ARMA) model by using the so-called Noise-Indicator time series. The obtained model, named NIN–ARMA model, is nonlinear threshold autoregressive one. The basic stochastic properties of the NIN–ARMA model have been analyzed and the Empirical Characteristic Function (ECF) method has been used for parameters estimation. Finally, the NIN–ARMA model has been applied in fitting of two actual, real-based physical time series.",
publisher = "University Politehnica of Bucharest",
journal = "U.P.B. Scientific Bulletin-Series A: Applied Mathematics & Physics",
title = "Noise-Indicator Arma Model with Application in Fitting Physically-Based Time Series",
volume = "81",
number = "2",
pages = "257-264",
url = "https://hdl.handle.net/21.15107/rcub_jakov_974"
}

Stojanović, V., Kevkić, T., Ljajko, E.,& Jelić, G.. (2019). Noise-Indicator Arma Model with Application in Fitting Physically-Based Time Series. in U.P.B. Scientific Bulletin-Series A: Applied Mathematics & Physics
University Politehnica of Bucharest., 81(2), 257-264.
https://hdl.handle.net/21.15107/rcub_jakov_974

Stojanović V, Kevkić T, Ljajko E, Jelić G. Noise-Indicator Arma Model with Application in Fitting Physically-Based Time Series. in U.P.B. Scientific Bulletin-Series A: Applied Mathematics & Physics. 2019;81(2):257-264.
https://hdl.handle.net/21.15107/rcub_jakov_974 .

Stojanović, Vladica, Kevkić, Tijana, Ljajko, Eugen, Jelić, Gordana, "Noise-Indicator Arma Model with Application in Fitting Physically-Based Time Series" in U.P.B. Scientific Bulletin-Series A: Applied Mathematics & Physics, 81, no. 2 (2019):257-264,
https://hdl.handle.net/21.15107/rcub_jakov_974 .

TY  - JOUR
AU  - Kevkić, Tijana
AU  - Stojanović, Vladica
PY  - 2019
UR  - http://jakov.kpu.edu.rs/handle/123456789/869
AB  - In this paper, the homotopy perturbation method (HPM) is applied to the coupled set of Schrödinger-Poisson (SP) equations in inversion layer problem for obtaining the approximate analytical solution. Inversion layer of n-type is considered, and the electric quantum limit is assumed. By introducing some dimensionless quantities, the SP system has been turned into one which can be solved along the infinite interval. After some appropriate transformations, the infinite interval has been reduced to finite one (0,1)$(0,1)$, and recurrence series of the HPM approximate solutions of the coupled SP system have been obtained. The existence and convergence of obtained HPM approximate solutions have been formally proved. Moreover, these solutions show relative simple mathematical form, as well as high degree of accuracy what is desirable for semiconductor device modelling.
PB  - Tübingen : Verlag der Zeitschrift für Naturforschung
T2  - Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences
T1  - Approximate Solution of Coupled Schrödinger and Poisson Equation in Inversion Layer Problem: An Approach Based on Homotopy Perturbations
VL  - 74
IS  - 6
SP  - 457
EP  - 467
DO  - 10.1515/zna-2018-0495
ER  - 

@article{
author = "Kevkić, Tijana and Stojanović, Vladica",
year = "2019",
abstract = "In this paper, the homotopy perturbation method (HPM) is applied to the coupled set of Schrödinger-Poisson (SP) equations in inversion layer problem for obtaining the approximate analytical solution. Inversion layer of n-type is considered, and the electric quantum limit is assumed. By introducing some dimensionless quantities, the SP system has been turned into one which can be solved along the infinite interval. After some appropriate transformations, the infinite interval has been reduced to finite one (0,1)$(0,1)$, and recurrence series of the HPM approximate solutions of the coupled SP system have been obtained. The existence and convergence of obtained HPM approximate solutions have been formally proved. Moreover, these solutions show relative simple mathematical form, as well as high degree of accuracy what is desirable for semiconductor device modelling.",
publisher = "Tübingen : Verlag der Zeitschrift für Naturforschung",
journal = "Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences",
title = "Approximate Solution of Coupled Schrödinger and Poisson Equation in Inversion Layer Problem: An Approach Based on Homotopy Perturbations",
volume = "74",
number = "6",
pages = "457-467",
doi = "10.1515/zna-2018-0495"
}

Kevkić, T.,& Stojanović, V.. (2019). Approximate Solution of Coupled Schrödinger and Poisson Equation in Inversion Layer Problem: An Approach Based on Homotopy Perturbations. in Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences
Tübingen : Verlag der Zeitschrift für Naturforschung., 74(6), 457-467.
https://doi.org/10.1515/zna-2018-0495

Kevkić T, Stojanović V. Approximate Solution of Coupled Schrödinger and Poisson Equation in Inversion Layer Problem: An Approach Based on Homotopy Perturbations. in Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences. 2019;74(6):457-467.
doi:10.1515/zna-2018-0495 .

Kevkić, Tijana, Stojanović, Vladica, "Approximate Solution of Coupled Schrödinger and Poisson Equation in Inversion Layer Problem: An Approach Based on Homotopy Perturbations" in Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences, 74, no. 6 (2019):457-467,
https://doi.org/10.1515/zna-2018-0495 . .

TY  - JOUR
AU  - Kevkić, Tijana
AU  - Stojanović, Vladica
AU  - Joksimović, Dušan
PY  - 2018
UR  - http://jakov.kpu.edu.rs/handle/123456789/843
AB  - The application of generalized logistic (GL) functions of the second type in fitting an important smoothing factor in a charge-based MOSFET model has been proposed. Beside the accurate results for the inversion charge density (ICD), this the GL-functional form of the smoothing factor enables also continuous and varied transitions of the ICD between weak and strong inversion region. Simulated values of the drain current, capacitance and transconductance match closely with numerical data for a wide range of substrate doping and oxide thickness.
PB  - Springer, New York
T2  - Journal of computational electronics
T1  - Application of the generalized logistic functions in modeling inversion charge density of MOSFET
VL  - 17
IS  - 2
SP  - 689
EP  - 697
DO  - 10.1007/s10825-018-1137-5
ER  - 

@article{
author = "Kevkić, Tijana and Stojanović, Vladica and Joksimović, Dušan",
year = "2018",
abstract = "The application of generalized logistic (GL) functions of the second type in fitting an important smoothing factor in a charge-based MOSFET model has been proposed. Beside the accurate results for the inversion charge density (ICD), this the GL-functional form of the smoothing factor enables also continuous and varied transitions of the ICD between weak and strong inversion region. Simulated values of the drain current, capacitance and transconductance match closely with numerical data for a wide range of substrate doping and oxide thickness.",
publisher = "Springer, New York",
journal = "Journal of computational electronics",
title = "Application of the generalized logistic functions in modeling inversion charge density of MOSFET",
volume = "17",
number = "2",
pages = "689-697",
doi = "10.1007/s10825-018-1137-5"
}

Kevkić, T., Stojanović, V.,& Joksimović, D.. (2018). Application of the generalized logistic functions in modeling inversion charge density of MOSFET. in Journal of computational electronics
Springer, New York., 17(2), 689-697.
https://doi.org/10.1007/s10825-018-1137-5

Kevkić T, Stojanović V, Joksimović D. Application of the generalized logistic functions in modeling inversion charge density of MOSFET. in Journal of computational electronics. 2018;17(2):689-697.
doi:10.1007/s10825-018-1137-5 .

Kevkić, Tijana, Stojanović, Vladica, Joksimović, Dušan, "Application of the generalized logistic functions in modeling inversion charge density of MOSFET" in Journal of computational electronics, 17, no. 2 (2018):689-697,
https://doi.org/10.1007/s10825-018-1137-5 . .

TY  - JOUR
AU  - Stojanović, Vladica
AU  - Kevkić, Tijana
AU  - Jelić, Gordana
AU  - Ranđelović, Dragan
PY  - 2018
UR  - http://jakov.kpu.edu.rs/handle/123456789/841
AB  - This paper describes the application of the homotopy perturbations method (HPM) in the computation of invariant measures (IMs) of the non-linear dynamical systems which are characterized by the complex, chaotic behavior. The convergence of the HPM is formally investigated and confirmed, and its efficiency is illustrated in several examples of widely used chaotic maps.
PB  - Univ Politehnica Bucharest, Sci Bull, Bucuresti
T2  - University politehnica of Bucharest scientific bulletin-series a-applied mathematics and physics
T1  - Determination of invariant measures: An approach based on homotopy perturbations
VL  - 80
IS  - 2
SP  - 119
EP  - 128
UR  - https://hdl.handle.net/21.15107/rcub_jakov_841
ER  - 

@article{
author = "Stojanović, Vladica and Kevkić, Tijana and Jelić, Gordana and Ranđelović, Dragan",
year = "2018",
abstract = "This paper describes the application of the homotopy perturbations method (HPM) in the computation of invariant measures (IMs) of the non-linear dynamical systems which are characterized by the complex, chaotic behavior. The convergence of the HPM is formally investigated and confirmed, and its efficiency is illustrated in several examples of widely used chaotic maps.",
publisher = "Univ Politehnica Bucharest, Sci Bull, Bucuresti",
journal = "University politehnica of Bucharest scientific bulletin-series a-applied mathematics and physics",
title = "Determination of invariant measures: An approach based on homotopy perturbations",
volume = "80",
number = "2",
pages = "119-128",
url = "https://hdl.handle.net/21.15107/rcub_jakov_841"
}

Stojanović, V., Kevkić, T., Jelić, G.,& Ranđelović, D.. (2018). Determination of invariant measures: An approach based on homotopy perturbations. in University politehnica of Bucharest scientific bulletin-series a-applied mathematics and physics
Univ Politehnica Bucharest, Sci Bull, Bucuresti., 80(2), 119-128.
https://hdl.handle.net/21.15107/rcub_jakov_841

Stojanović V, Kevkić T, Jelić G, Ranđelović D. Determination of invariant measures: An approach based on homotopy perturbations. in University politehnica of Bucharest scientific bulletin-series a-applied mathematics and physics. 2018;80(2):119-128.
https://hdl.handle.net/21.15107/rcub_jakov_841 .

Stojanović, Vladica, Kevkić, Tijana, Jelić, Gordana, Ranđelović, Dragan, "Determination of invariant measures: An approach based on homotopy perturbations" in University politehnica of Bucharest scientific bulletin-series a-applied mathematics and physics, 80, no. 2 (2018):119-128,
https://hdl.handle.net/21.15107/rcub_jakov_841 .

TY  - JOUR
AU  - Kevkić, Tijana
AU  - Stojanović, Vladica
AU  - Petrović, Vera
AU  - Ranđelović, Dragan
PY  - 2018
UR  - http://jakov.kpu.edu.rs/handle/123456789/832
AB  - In this paper, the expression for the charge density in inversion layer at the surface of semiconductor has been improved. The improvement is related to the replacement of an empirical smoothing factor by new one which has generalized logistic (GL) functional form. The introduction of the GL function of the second type in the original interpolating expression leads to continual and smooth transition of the inversion charge density (ICD) between different regions of metal-oxide-semiconductor (MOS) operation. Moreover, in this way any empirical determinations are avoided. The simulated values of the ICD match closely with the numerical results of implicit charge sheet model for a wide range of dopant concentration and oxide thickness. In addition, the proposed GL fitting procedure has been also extended in the case where quantum mechanical effects play important role in inversion mode of scaled MOS devices.
PB  - International Institute for the Science of Sintering, Beograd
T2  - Science of sintering
T1  - Inversion Charge Density of MOS transistor with Generalized Logistic Functions
VL  - 50
IS  - 2
SP  - 225
EP  - 235
DO  - 10.2298/SOS1802225K
ER  - 

@article{
author = "Kevkić, Tijana and Stojanović, Vladica and Petrović, Vera and Ranđelović, Dragan",
year = "2018",
abstract = "In this paper, the expression for the charge density in inversion layer at the surface of semiconductor has been improved. The improvement is related to the replacement of an empirical smoothing factor by new one which has generalized logistic (GL) functional form. The introduction of the GL function of the second type in the original interpolating expression leads to continual and smooth transition of the inversion charge density (ICD) between different regions of metal-oxide-semiconductor (MOS) operation. Moreover, in this way any empirical determinations are avoided. The simulated values of the ICD match closely with the numerical results of implicit charge sheet model for a wide range of dopant concentration and oxide thickness. In addition, the proposed GL fitting procedure has been also extended in the case where quantum mechanical effects play important role in inversion mode of scaled MOS devices.",
publisher = "International Institute for the Science of Sintering, Beograd",
journal = "Science of sintering",
title = "Inversion Charge Density of MOS transistor with Generalized Logistic Functions",
volume = "50",
number = "2",
pages = "225-235",
doi = "10.2298/SOS1802225K"
}

Kevkić, T., Stojanović, V., Petrović, V.,& Ranđelović, D.. (2018). Inversion Charge Density of MOS transistor with Generalized Logistic Functions. in Science of sintering
International Institute for the Science of Sintering, Beograd., 50(2), 225-235.
https://doi.org/10.2298/SOS1802225K

Kevkić T, Stojanović V, Petrović V, Ranđelović D. Inversion Charge Density of MOS transistor with Generalized Logistic Functions. in Science of sintering. 2018;50(2):225-235.
doi:10.2298/SOS1802225K .

Kevkić, Tijana, Stojanović, Vladica, Petrović, Vera, Ranđelović, Dragan, "Inversion Charge Density of MOS transistor with Generalized Logistic Functions" in Science of sintering, 50, no. 2 (2018):225-235,
https://doi.org/10.2298/SOS1802225K . .

TY  - JOUR
AU  - Kevkić, Tijana
AU  - Stojanović, Vladica
AU  - Joksimović, Dušan
PY  - 2017
UR  - http://jakov.kpu.edu.rs/handle/123456789/790
AB  - An improved surface-potential-based metal-oxide-semiconductor field-effect transistor (MOSFET) model is presented. The improvement consists in introducing a new generalized logistic functional form for the smoothing factor that allows for a continuous transition of the surface potential from the depletion to strong inversion region. This functional form takes into account specific changes in the technological characteristics of MOSFET devices. The model combines the advantages of both regional and single-piece models and satisfies all requirements for compact models, i.e., continuity, accuracy, scalability, and simulation performance. Comparison with numerical data shows that the model provides an accurate description of the surface potential for a wide range of substrate doping and oxide thickness.
PB  - Springer, New York
T2  - Journal of computational electronics
T1  - Application of generalized logistic functions in surface-potential-based MOSFET modeling
VL  - 16
IS  - 1
SP  - 90
EP  - 97
DO  - 10.1007/s10825-016-0935-x
ER  - 

@article{
author = "Kevkić, Tijana and Stojanović, Vladica and Joksimović, Dušan",
year = "2017",
abstract = "An improved surface-potential-based metal-oxide-semiconductor field-effect transistor (MOSFET) model is presented. The improvement consists in introducing a new generalized logistic functional form for the smoothing factor that allows for a continuous transition of the surface potential from the depletion to strong inversion region. This functional form takes into account specific changes in the technological characteristics of MOSFET devices. The model combines the advantages of both regional and single-piece models and satisfies all requirements for compact models, i.e., continuity, accuracy, scalability, and simulation performance. Comparison with numerical data shows that the model provides an accurate description of the surface potential for a wide range of substrate doping and oxide thickness.",
publisher = "Springer, New York",
journal = "Journal of computational electronics",
title = "Application of generalized logistic functions in surface-potential-based MOSFET modeling",
volume = "16",
number = "1",
pages = "90-97",
doi = "10.1007/s10825-016-0935-x"
}

Kevkić, T., Stojanović, V.,& Joksimović, D.. (2017). Application of generalized logistic functions in surface-potential-based MOSFET modeling. in Journal of computational electronics
Springer, New York., 16(1), 90-97.
https://doi.org/10.1007/s10825-016-0935-x

Kevkić T, Stojanović V, Joksimović D. Application of generalized logistic functions in surface-potential-based MOSFET modeling. in Journal of computational electronics. 2017;16(1):90-97.
doi:10.1007/s10825-016-0935-x .

Kevkić, Tijana, Stojanović, Vladica, Joksimović, Dušan, "Application of generalized logistic functions in surface-potential-based MOSFET modeling" in Journal of computational electronics, 16, no. 1 (2017):90-97,
https://doi.org/10.1007/s10825-016-0935-x . .

TY  - JOUR
AU  - Kevkić, Tijana
AU  - Stojanović, Vladica
AU  - Ranđelović, Dragan
PY  - 2017
UR  - http://jakov.kpu.edu.rs/handle/123456789/748
AB  - In this manuscript, a novel approach for an approximate solving of coupled Schrodinger-Poisson (SP) equations in the accumulation layer of semiconductor is described. This approach, based on the homotopy perturbation method (HPM), gives an approximate analytic solution of SP system which at the same time has a relative simple mathematical form, as well as a high degree of accuracy. A good agreement between HPM solution and exact solution of SP system indicates on the utility and sufficiency of the HP method.
PB  - Editura Acad Romane, Bucuresti
T2  - Romanian journal of physics
T1  - Application of homotopy perturbation method in solving coupled schrödinger and poisson equation in accumulation layer
VL  - 62
IS  - 9-10
UR  - https://hdl.handle.net/21.15107/rcub_jakov_748
ER  - 

@article{
author = "Kevkić, Tijana and Stojanović, Vladica and Ranđelović, Dragan",
year = "2017",
abstract = "In this manuscript, a novel approach for an approximate solving of coupled Schrodinger-Poisson (SP) equations in the accumulation layer of semiconductor is described. This approach, based on the homotopy perturbation method (HPM), gives an approximate analytic solution of SP system which at the same time has a relative simple mathematical form, as well as a high degree of accuracy. A good agreement between HPM solution and exact solution of SP system indicates on the utility and sufficiency of the HP method.",
publisher = "Editura Acad Romane, Bucuresti",
journal = "Romanian journal of physics",
title = "Application of homotopy perturbation method in solving coupled schrödinger and poisson equation in accumulation layer",
volume = "62",
number = "9-10",
url = "https://hdl.handle.net/21.15107/rcub_jakov_748"
}

Kevkić, T., Stojanović, V.,& Ranđelović, D.. (2017). Application of homotopy perturbation method in solving coupled schrödinger and poisson equation in accumulation layer. in Romanian journal of physics
Editura Acad Romane, Bucuresti., 62(9-10).
https://hdl.handle.net/21.15107/rcub_jakov_748

Kevkić T, Stojanović V, Ranđelović D. Application of homotopy perturbation method in solving coupled schrödinger and poisson equation in accumulation layer. in Romanian journal of physics. 2017;62(9-10).
https://hdl.handle.net/21.15107/rcub_jakov_748 .

Kevkić, Tijana, Stojanović, Vladica, Ranđelović, Dragan, "Application of homotopy perturbation method in solving coupled schrödinger and poisson equation in accumulation layer" in Romanian journal of physics, 62, no. 9-10 (2017),
https://hdl.handle.net/21.15107/rcub_jakov_748 .