Application of generalized logistic functions in surface-potential-based MOSFET modeling
Authorized Users Only
Article (Published version)
MetadataShow full item record
An improved surface-potential-based metal-oxide-semiconductor field-effect transistor (MOSFET) model is presented. The improvement consists in introducing a new generalized logistic functional form for the smoothing factor that allows for a continuous transition of the surface potential from the depletion to strong inversion region. This functional form takes into account specific changes in the technological characteristics of MOSFET devices. The model combines the advantages of both regional and single-piece models and satisfies all requirements for compact models, i.e., continuity, accuracy, scalability, and simulation performance. Comparison with numerical data shows that the model provides an accurate description of the surface potential for a wide range of substrate doping and oxide thickness.
Keywords:MOSFET modeling / Generalized logistic functions / Surface potential / Parameter estimation
Source:Journal of computational electronics, 2017, 16, 1, 90-97
- Springer, New York