An improved surface-potential-based metal-oxide-semiconductor field-effect transistor (MOSFET) model is presented. The improvement consists in introducing a new generalized logistic functional form for the smoothing factor that allows for a continuous transition of the surface potential from the depletion to strong inversion region. This functional form takes into account specific changes in the technological characteristics of MOSFET devices. The model combines the advantages of both regional and single-piece models and satisfies all requirements for compact models, i.e., continuity, accuracy, scalability, and simulation performance. Comparison with numerical data shows that the model provides an accurate description of the surface potential for a wide range of substrate doping and oxide thickness.
TY - JOUR
AU - Kevkić, Tijana
AU - Stojanović, Vladica
AU - Radović-Stojanović, Jelena
PY - 2017
UR - http://jakov.kpu.edu.rs/handle/123456789/790
AB - An improved surface-potential-based metal-oxide-semiconductor field-effect transistor (MOSFET) model is presented. The improvement consists in introducing a new generalized logistic functional form for the smoothing factor that allows for a continuous transition of the surface potential from the depletion to strong inversion region. This functional form takes into account specific changes in the technological characteristics of MOSFET devices. The model combines the advantages of both regional and single-piece models and satisfies all requirements for compact models, i.e., continuity, accuracy, scalability, and simulation performance. Comparison with numerical data shows that the model provides an accurate description of the surface potential for a wide range of substrate doping and oxide thickness.
PB - Springer, New York
T2 - Journal of computational electronics
T1 - Application of generalized logistic functions in surface-potential-based MOSFET modeling
VL - 16
IS - 1
SP - 90
EP - 97
DO - 10.1007/s10825-016-0935-x
ER -
@article{
author = "Kevkić, Tijana and Stojanović, Vladica and Radović-Stojanović, Jelena ",
year = "2017",
abstract = "An improved surface-potential-based metal-oxide-semiconductor field-effect transistor (MOSFET) model is presented. The improvement consists in introducing a new generalized logistic functional form for the smoothing factor that allows for a continuous transition of the surface potential from the depletion to strong inversion region. This functional form takes into account specific changes in the technological characteristics of MOSFET devices. The model combines the advantages of both regional and single-piece models and satisfies all requirements for compact models, i.e., continuity, accuracy, scalability, and simulation performance. Comparison with numerical data shows that the model provides an accurate description of the surface potential for a wide range of substrate doping and oxide thickness.",
publisher = "Springer, New York",
journal = "Journal of computational electronics",
title = "Application of generalized logistic functions in surface-potential-based MOSFET modeling",
volume = "16",
number = "1",
pages = "90-97",
doi = "10.1007/s10825-016-0935-x"
}
Kevkić, T., Stojanović, V.,& Radović-Stojanović, J.. (2017). Application of generalized logistic functions in surface-potential-based MOSFET modeling. in Journal of computational electronics
Springer, New York., 16(1), 90-97.
https://doi.org/10.1007/s10825-016-0935-x
Kevkić T, Stojanović V, Radović-Stojanović J. Application of generalized logistic functions in surface-potential-based MOSFET modeling. in Journal of computational electronics. 2017;16(1):90-97.
doi:10.1007/s10825-016-0935-x .
Kevkić, Tijana, Stojanović, Vladica, Radović-Stojanović, Jelena , "Application of generalized logistic functions in surface-potential-based MOSFET modeling" in Journal of computational electronics, 16, no. 1 (2017):90-97,
https://doi.org/10.1007/s10825-016-0935-x . .
