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Application of homotopy perturbation method in solving coupled schrödinger and poisson equation in accumulation layer

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2017
RomJPhys.62.122.pdf (347.2Kb)
Autori
Kevkić, Tijana
Stojanović, Vladica
Ranđelović, Dragan
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentu
Apstrakt
In this manuscript, a novel approach for an approximate solving of coupled Schrodinger-Poisson (SP) equations in the accumulation layer of semiconductor is described. This approach, based on the homotopy perturbation method (HPM), gives an approximate analytic solution of SP system which at the same time has a relative simple mathematical form, as well as a high degree of accuracy. A good agreement between HPM solution and exact solution of SP system indicates on the utility and sufficiency of the HP method.
Ključne reči:
Homotopy perturbation / coupled SP equations / accumulation layer / approximation
Izvor:
Romanian journal of physics, 2017, 62, 9-10
Izdavač:
  • Editura Acad Romane, Bucuresti

ISSN: 1221-146X

WoS: 000422822000003

Scopus: 2-s2.0-85038870393
[ Google Scholar ]
5
4
Handle
https://hdl.handle.net/21.15107/rcub_jakov_748
URI
http://jakov.kpu.edu.rs/handle/123456789/748
Kolekcije
  • Radovi istraživača / Researchers' publications
Institucija/grupa
Jakov
TY  - JOUR
AU  - Kevkić, Tijana
AU  - Stojanović, Vladica
AU  - Ranđelović, Dragan
PY  - 2017
UR  - http://jakov.kpu.edu.rs/handle/123456789/748
AB  - In this manuscript, a novel approach for an approximate solving of coupled Schrodinger-Poisson (SP) equations in the accumulation layer of semiconductor is described. This approach, based on the homotopy perturbation method (HPM), gives an approximate analytic solution of SP system which at the same time has a relative simple mathematical form, as well as a high degree of accuracy. A good agreement between HPM solution and exact solution of SP system indicates on the utility and sufficiency of the HP method.
PB  - Editura Acad Romane, Bucuresti
T2  - Romanian journal of physics
T1  - Application of homotopy perturbation method in solving coupled schrödinger and poisson equation in accumulation layer
VL  - 62
IS  - 9-10
UR  - https://hdl.handle.net/21.15107/rcub_jakov_748
ER  - 
@article{
author = "Kevkić, Tijana and Stojanović, Vladica and Ranđelović, Dragan",
year = "2017",
abstract = "In this manuscript, a novel approach for an approximate solving of coupled Schrodinger-Poisson (SP) equations in the accumulation layer of semiconductor is described. This approach, based on the homotopy perturbation method (HPM), gives an approximate analytic solution of SP system which at the same time has a relative simple mathematical form, as well as a high degree of accuracy. A good agreement between HPM solution and exact solution of SP system indicates on the utility and sufficiency of the HP method.",
publisher = "Editura Acad Romane, Bucuresti",
journal = "Romanian journal of physics",
title = "Application of homotopy perturbation method in solving coupled schrödinger and poisson equation in accumulation layer",
volume = "62",
number = "9-10",
url = "https://hdl.handle.net/21.15107/rcub_jakov_748"
}
Kevkić, T., Stojanović, V.,& Ranđelović, D.. (2017). Application of homotopy perturbation method in solving coupled schrödinger and poisson equation in accumulation layer. in Romanian journal of physics
Editura Acad Romane, Bucuresti., 62(9-10).
https://hdl.handle.net/21.15107/rcub_jakov_748
Kevkić T, Stojanović V, Ranđelović D. Application of homotopy perturbation method in solving coupled schrödinger and poisson equation in accumulation layer. in Romanian journal of physics. 2017;62(9-10).
https://hdl.handle.net/21.15107/rcub_jakov_748 .
Kevkić, Tijana, Stojanović, Vladica, Ranđelović, Dragan, "Application of homotopy perturbation method in solving coupled schrödinger and poisson equation in accumulation layer" in Romanian journal of physics, 62, no. 9-10 (2017),
https://hdl.handle.net/21.15107/rcub_jakov_748 .

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