TY  - JOUR
AU  - Kevkić, Tijana
AU  - Stojanović, Vladica
AU  - Petrović, Vera
AU  - Ranđelović, Dragan
PY  - 2018
UR  - http://jakov.kpu.edu.rs/handle/123456789/832
AB  - In this paper, the expression for the charge density in inversion layer at the surface of semiconductor has been improved. The improvement is related to the replacement of an empirical smoothing factor by new one which has generalized logistic (GL) functional form. The introduction of the GL function of the second type in the original interpolating expression leads to continual and smooth transition of the inversion charge density (ICD) between different regions of metal-oxide-semiconductor (MOS) operation. Moreover, in this way any empirical determinations are avoided. The simulated values of the ICD match closely with the numerical results of implicit charge sheet model for a wide range of dopant concentration and oxide thickness. In addition, the proposed GL fitting procedure has been also extended in the case where quantum mechanical effects play important role in inversion mode of scaled MOS devices.
PB  - International Institute for the Science of Sintering, Beograd
T2  - Science of sintering
T1  - Inversion Charge Density of MOS transistor with Generalized Logistic Functions
VL  - 50
IS  - 2
SP  - 225
EP  - 235
DO  - 10.2298/SOS1802225K
ER  - 

@article{
author = "Kevkić, Tijana and Stojanović, Vladica and Petrović, Vera and Ranđelović, Dragan",
year = "2018",
abstract = "In this paper, the expression for the charge density in inversion layer at the surface of semiconductor has been improved. The improvement is related to the replacement of an empirical smoothing factor by new one which has generalized logistic (GL) functional form. The introduction of the GL function of the second type in the original interpolating expression leads to continual and smooth transition of the inversion charge density (ICD) between different regions of metal-oxide-semiconductor (MOS) operation. Moreover, in this way any empirical determinations are avoided. The simulated values of the ICD match closely with the numerical results of implicit charge sheet model for a wide range of dopant concentration and oxide thickness. In addition, the proposed GL fitting procedure has been also extended in the case where quantum mechanical effects play important role in inversion mode of scaled MOS devices.",
publisher = "International Institute for the Science of Sintering, Beograd",
journal = "Science of sintering",
title = "Inversion Charge Density of MOS transistor with Generalized Logistic Functions",
volume = "50",
number = "2",
pages = "225-235",
doi = "10.2298/SOS1802225K"
}

Kevkić, T., Stojanović, V., Petrović, V.,& Ranđelović, D.. (2018). Inversion Charge Density of MOS transistor with Generalized Logistic Functions. in Science of sintering
International Institute for the Science of Sintering, Beograd., 50(2), 225-235.
https://doi.org/10.2298/SOS1802225K

Kevkić T, Stojanović V, Petrović V, Ranđelović D. Inversion Charge Density of MOS transistor with Generalized Logistic Functions. in Science of sintering. 2018;50(2):225-235.
doi:10.2298/SOS1802225K .

Kevkić, Tijana, Stojanović, Vladica, Petrović, Vera, Ranđelović, Dragan, "Inversion Charge Density of MOS transistor with Generalized Logistic Functions" in Science of sintering, 50, no. 2 (2018):225-235,
https://doi.org/10.2298/SOS1802225K . .