Inversion Charge Density of MOS transistor with Generalized Logistic Functions
Abstract
In this paper, the expression for the charge density in inversion layer at the surface of semiconductor has been improved. The improvement is related to the replacement of an empirical smoothing factor by new one which has generalized logistic (GL) functional form. The introduction of the GL function of the second type in the original interpolating expression leads to continual and smooth transition of the inversion charge density (ICD) between different regions of metal-oxide-semiconductor (MOS) operation. Moreover, in this way any empirical determinations are avoided. The simulated values of the ICD match closely with the numerical results of implicit charge sheet model for a wide range of dopant concentration and oxide thickness. In addition, the proposed GL fitting procedure has been also extended in the case where quantum mechanical effects play important role in inversion mode of scaled MOS devices.
Keywords:
Inversion charge density / MOS modeling / Generalized logistic function / Quantum mechanical effectsSource:
Science of sintering, 2018, 50, 2, 225-235Publisher:
- International Institute for the Science of Sintering, Beograd
DOI: 10.2298/SOS1802225K
ISSN: 0350-820X
WoS: 000452975300009
Scopus: 2-s2.0-85051424544
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Institution/Community
JakovTY - JOUR AU - Kevkić, Tijana AU - Stojanović, Vladica AU - Petrović, Vera AU - Ranđelović, Dragan PY - 2018 UR - http://jakov.kpu.edu.rs/handle/123456789/832 AB - In this paper, the expression for the charge density in inversion layer at the surface of semiconductor has been improved. The improvement is related to the replacement of an empirical smoothing factor by new one which has generalized logistic (GL) functional form. The introduction of the GL function of the second type in the original interpolating expression leads to continual and smooth transition of the inversion charge density (ICD) between different regions of metal-oxide-semiconductor (MOS) operation. Moreover, in this way any empirical determinations are avoided. The simulated values of the ICD match closely with the numerical results of implicit charge sheet model for a wide range of dopant concentration and oxide thickness. In addition, the proposed GL fitting procedure has been also extended in the case where quantum mechanical effects play important role in inversion mode of scaled MOS devices. PB - International Institute for the Science of Sintering, Beograd T2 - Science of sintering T1 - Inversion Charge Density of MOS transistor with Generalized Logistic Functions VL - 50 IS - 2 SP - 225 EP - 235 DO - 10.2298/SOS1802225K ER -
@article{ author = "Kevkić, Tijana and Stojanović, Vladica and Petrović, Vera and Ranđelović, Dragan", year = "2018", abstract = "In this paper, the expression for the charge density in inversion layer at the surface of semiconductor has been improved. The improvement is related to the replacement of an empirical smoothing factor by new one which has generalized logistic (GL) functional form. The introduction of the GL function of the second type in the original interpolating expression leads to continual and smooth transition of the inversion charge density (ICD) between different regions of metal-oxide-semiconductor (MOS) operation. Moreover, in this way any empirical determinations are avoided. The simulated values of the ICD match closely with the numerical results of implicit charge sheet model for a wide range of dopant concentration and oxide thickness. In addition, the proposed GL fitting procedure has been also extended in the case where quantum mechanical effects play important role in inversion mode of scaled MOS devices.", publisher = "International Institute for the Science of Sintering, Beograd", journal = "Science of sintering", title = "Inversion Charge Density of MOS transistor with Generalized Logistic Functions", volume = "50", number = "2", pages = "225-235", doi = "10.2298/SOS1802225K" }
Kevkić, T., Stojanović, V., Petrović, V.,& Ranđelović, D.. (2018). Inversion Charge Density of MOS transistor with Generalized Logistic Functions. in Science of sintering International Institute for the Science of Sintering, Beograd., 50(2), 225-235. https://doi.org/10.2298/SOS1802225K
Kevkić T, Stojanović V, Petrović V, Ranđelović D. Inversion Charge Density of MOS transistor with Generalized Logistic Functions. in Science of sintering. 2018;50(2):225-235. doi:10.2298/SOS1802225K .
Kevkić, Tijana, Stojanović, Vladica, Petrović, Vera, Ranđelović, Dragan, "Inversion Charge Density of MOS transistor with Generalized Logistic Functions" in Science of sintering, 50, no. 2 (2018):225-235, https://doi.org/10.2298/SOS1802225K . .