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dc.creatorKevkić, Tijana
dc.creatorStojanović, Vladica
dc.creatorJoksimović, Dušan
dc.date.accessioned2019-03-21T16:11:56Z
dc.date.available2019-03-21T16:11:56Z
dc.date.issued2018
dc.identifier.issn1569-8025
dc.identifier.urihttp://jakov.kpu.edu.rs/handle/123456789/843
dc.description.abstractThe application of generalized logistic (GL) functions of the second type in fitting an important smoothing factor in a charge-based MOSFET model has been proposed. Beside the accurate results for the inversion charge density (ICD), this the GL-functional form of the smoothing factor enables also continuous and varied transitions of the ICD between weak and strong inversion region. Simulated values of the drain current, capacitance and transconductance match closely with numerical data for a wide range of substrate doping and oxide thickness.en
dc.publisherSpringer, New York
dc.rightsrestrictedAccess
dc.sourceJournal of computational electronics
dc.subjectInversion chargeen
dc.subjectMOSFET modelingen
dc.subjectGeneralized logistic functionsen
dc.subjectApproximationen
dc.titleApplication of the generalized logistic functions in modeling inversion charge density of MOSFETen
dc.typearticle
dc.rights.licenseARR
dcterms.abstractСтојановић, Владица; Кевкић, Тијана; Јоксимовић, Душан;
dc.citation.volume17
dc.citation.issue2
dc.citation.spage689
dc.citation.epage697
dc.citation.other17(2): 689-697
dc.citation.rankM22
dc.identifier.doi10.1007/s10825-018-1137-5
dc.identifier.rcubconv_1223
dc.identifier.scopus2-s2.0-85042113181
dc.identifier.wos000431208600022
dc.type.versionpublishedVersion


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