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dc.creatorKevkić, Tijana
dc.creatorStojanović, Vladica
dc.creatorJoksimović, Dušan
dc.date.accessioned2019-03-21T16:10:37Z
dc.date.available2019-03-21T16:10:37Z
dc.date.issued2017
dc.identifier.issn1569-8025
dc.identifier.urihttp://jakov.kpu.edu.rs/handle/123456789/790
dc.description.abstractAn improved surface-potential-based metal-oxide-semiconductor field-effect transistor (MOSFET) model is presented. The improvement consists in introducing a new generalized logistic functional form for the smoothing factor that allows for a continuous transition of the surface potential from the depletion to strong inversion region. This functional form takes into account specific changes in the technological characteristics of MOSFET devices. The model combines the advantages of both regional and single-piece models and satisfies all requirements for compact models, i.e., continuity, accuracy, scalability, and simulation performance. Comparison with numerical data shows that the model provides an accurate description of the surface potential for a wide range of substrate doping and oxide thickness.en
dc.publisherSpringer, New York
dc.rightsrestrictedAccess
dc.sourceJournal of computational electronics
dc.subjectMOSFET modelingen
dc.subjectGeneralized logistic functionsen
dc.subjectSurface potentialen
dc.subjectParameter estimationen
dc.titleApplication of generalized logistic functions in surface-potential-based MOSFET modelingen
dc.typearticle
dc.rights.licenseARR
dcterms.abstractЈоксимовић, Душан; Кевкић, Тијана; Стојановић, Владица;
dc.citation.volume16
dc.citation.issue1
dc.citation.spage90
dc.citation.epage97
dc.citation.other16(1): 90-97
dc.citation.rankM23
dc.identifier.doi10.1007/s10825-016-0935-x
dc.identifier.rcubconv_1177
dc.identifier.scopus2-s2.0-84996843699
dc.identifier.wos000394370700011
dc.type.versionpublishedVersion


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